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Low driving voltage and high stability organic light-emtting diodes with rhenium oxide-doped hole transporting layer
Cited 145 time in
Web of Science
Cited 154 time in Scopus
- Authors
- Issue Date
- 2007-07-05
- Publisher
- American Institute of Physics
- Citation
- Appl. Phys. Lett. 91, 011113 (2007)
- Abstract
- The authors report a promising metal oxide-doped hole transporting layer (HTL) of rhenium oxide (ReO3)-doped N,N-diphenyl-N,N-bis (1,1-biphenyl)-4,4-diamine (NPB). The tris(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with ReO3-doped NPB HTL exhibit driving voltage of 5.2–5.4 V and power efficiency of 2.2–2.3 lm/W at 20 mA/cm2, which is significantly improved compared to those (7.1 V and 2.0 lm/W, respectively) obtained from the devices with undoped NPB. Furthermore, the device with ReO3-doped NPB layer reveals the prolonged lifetime than that with undoped NPB. Details of ReO3 doping effects are described based on the UV-Vis absorption spectra and characteristics of hole-only devices.
- ISSN
- 0003-6951 (print)
1077-3118 (online)
- Language
- English
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