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Integration of waveguide type wavelength demultiplexing photodetectors by selective intermixing of InGaAs/InGaAsP quantum well structures

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Authors
Yeo, Deok Ho; Yoon, Kyung Hun; Kim, Hang Ro; Kim, Sung June
Issue Date
2000
Publisher
International Society for Optical Engineering (SPIE)
Citation
Proceedings of SPIE Vol. 4078 (2000)
Keywords
Quantum well intermixingInGaAs/InGaAsP multi-quantum wellsdielectric cap annealingdual wavelength photodetectorwavelength demultiplexingwaveguide type photodetectorintegrated optics
Abstract
Wavelength demultiplexing photodetectors was fabricated using selective intermixing of InGaAs/InGaAsP multi-quantum well (MQW) structure. As InGaAs/InGaAsP MQW with U-InP cladding layer and U-InGaAs cap layer grown by metal organic chemical vapor deposition (MOCVD) was used for this experiment. Intermixing of InGaAs/InGaAsP MQW structure was done by a rapid thermal annealing after depositing SiO2 dielectric layer on the InGaAs cap layer by plasma-enhanced chemical vapor deposition (PECVD). Three sections of shorter-wavelength PD, absorber region and longer-wavelength PD lined up linearly and the front two regions were intermixed. Output current ratios of fabricated photodetectors at wavelengths of 1550 and 1480 nm were about 20dB and thus the photodetectors were proven to demultiplex both wavelengths.
ISSN
0277-786X
Language
English
URI
http://hdl.handle.net/10371/7731
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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