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The characteristics of Zn-doped InP using spin-on dopant as a diffusion source
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yoon, Kyung Hun | - |
| dc.contributor.author | Lee, Yong Ho | - |
| dc.contributor.author | Yeo, Deok Ho | - |
| dc.contributor.author | Kim, Sung June | - |
| dc.date.accessioned | 2009-08-26T03:20:09Z | - |
| dc.date.available | 2009-08-26T03:20:09Z | - |
| dc.date.issued | 2002-04 | - |
| dc.identifier.citation | 0Journal of Electronic Materials, 31, 244(2002) | en |
| dc.identifier.issn | 0361-5235 (print) | - |
| dc.identifier.issn | 1543-186X (online) | - |
| dc.identifier.uri | https://hdl.handle.net/10371/7850 | - |
| dc.description.abstract | Zn diffusion into InP was carried out ex-situ using a spin-on dopant as a diffusion
source. The characteristics of Zn-doped InP are analyzed using low-temperature photoluminescence (PL), differential Hall measurement, and secondary ion mass spectrometry (SIMS). Dopant activation of Zn is close to 100% using this method. Band-to-acceptor (B-A) transition peak is dominant in PL, which is a characteristic usually found in in-situ doping. This evidence along with an activation energy of 0.5 eV show that the diffusion is substitutional rather than interstitial. | en |
| dc.description.sponsorship | This work was supported by the Brain Korea 21
Project in 2000. | en |
| dc.language.iso | en | en |
| dc.publisher | Springer Verlag | en |
| dc.subject | Zn doping | en |
| dc.subject | indium phosphide (InP) | en |
| dc.subject | photoluminescence | en |
| dc.subject | activation energy | en |
| dc.title | The characteristics of Zn-doped InP using spin-on dopant as a diffusion source | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 윤경훈 | - |
| dc.contributor.AlternativeAuthor | 이용호 | - |
| dc.contributor.AlternativeAuthor | 여덕호 | - |
| dc.contributor.AlternativeAuthor | 김성준 | - |
| dc.identifier.doi | 10.1007/s11664-002-0139-y | - |
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