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Osseointegration of anodized titanium implants under different current voltages: A rabbit study
Cited 58 time in
Web of Science
Cited 67 time in Scopus
- Authors
- Issue Date
- 2007
- Publisher
- Blackwell Publishing
- Citation
- Journal of Oral Rehabilitation, Vol.34, No.7, pp.517-527
- Keywords
- Anodic oxidation (anodization) ; Titanium implant ; Removal torque ; Histomorphometric analysis ; Oxide layer
- Abstract
- The oxide layer that covers a titanium surface is extremely stable and appears to have excellent biocompatibility, which can result in successful osseointegration. The aim of this study was to analyse the characteristics of an oxide layer formed by anodic oxidation (anodization), and to evaluate the extent of bone healing around the anodized implant. The screw-type implants were made of commercially pure titanium (Grade 2). The Group 1 samples had a turned surface, and three other types of experimental specimens were anodized under constant voltages of 190 V (Group 2), 230 V (Group 3) and 270 V (Group 4). The surface characteristics of each sample type were inspected. Removal torque was measured after a 4-week healing period and the histomorphometric analysis was performed 6 weeks after implantation in rabbit tibiae. There was an increase in both the size and number of pores as the anodizing voltage increased. The Ra value of the Group 4 samples was higher than those in the Group 1 and 2 samples (P < 0.05). Group 3 showed a difference compared with Group 1 (P < 0.05). A thicker oxide layer, which contained crystalline (anatase) TiO2 with the inclusion of some electrolytes (Ca, P), was formed at the higher anodizing voltage. Group 4 had higher removal torque values and percentages of bone-to-implant contact than the other groups (P < 0.05). The anodized titanium implants showed more intimate and stronger connections with peri-implant bone during early osseointegration than the turned titanium implants in this experimental model. (C) 2007 Blackwell Publishing Ltd.
- ISSN
- 0305-182X
- Language
- English
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