GaAs MOSFET using MBE-grown Ga2O3 (Gd2O3) as gate oxide

Abstract

An enhancement mode GaAs metaloxide- semiconductor field effect transistor (MOSFET) with Ga203 (Gd203) as gate dielectric has been successfully fabricated. The low interface density Ga203 (Gd203) oxide and GaAs n-channel layer were grown by in situ molecular beam epitaxy (MBE). The fabricated n-channel MOSFET with 20 nm-thick oxide and 2 pn-long gate operated both in enhancement and depletion modes, with a peak transconductance of 40 mS/ mm in the enhancement mode. While operating with gate voltages ranging from -1 to 5V, the device showed a drain current drift of 10.5% for a duration of 104s, a limited amount of hysteresis and negligible dispersion of transconductance from lOHz to 1MHz.