S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Electrical and Computer Engineering (전기·정보공학부) Journal Papers (저널논문_전기·정보공학부)
Monolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifier
- Kim, Sung June; Guth, G.; Vella-Coleiro, G.; Seabury, C.; Sponsler, W.; Rhoades, B.
- Issue Date
- IEEE Electron Device Lett., vol. 9, pp. 447-449, Sept. 1988
- monolithically integrated p-i-n FET amplifier has been
fabricated using ion-implanted indium phosphide (InP) JFETs. The
vertically integrated material structure consists of a vapor phase epitaxy
(VPE) grown InCaAs photoabsorption layer and a metal organic
chemical vapor deposition (MOCVD) grown Fe-doped semi-insulating
layer. A Zn diffusion was performed to complete the p-i-n photodiode.
High-performance fully implanted InP JFETs were used to form the
integrated amplifier with a symmetrical design to remove the dc offset.
With a receiver sensitivity of ~ 36.4 dBm measured at 200-Mbit/s NRZ
for IO RER, it is easily the most sensitive monolithic p-i-n FET preamp
yet reported in this frequency range. The p-i-n amplifier has a dynamic
range of 15 dH.
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