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광소자 제작을 위해 spin-on 방식으로 Zn 도핑된 InP의 광학적 특성 분석

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dc.contributor.author윤경훈-
dc.contributor.author이용호-
dc.contributor.author여덕호-
dc.contributor.author이호승-
dc.contributor.author김성준-
dc.date.accessioned2009-09-08T04:38:21Z-
dc.date.available2009-09-08T04:38:21Z-
dc.date.issued2000-05-
dc.identifier.citation제8회 광전자 및 광통신 학술회의, pp. 229-230, 무주리조트, 2000년 5월 16-18일en
dc.identifier.urihttps://hdl.handle.net/10371/8920-
dc.description.abstractIn this study Zn doping was carried out by spin-on method for the fabrication of InP based optical devices. The properties of Zn-doped InP were characterized using low temperature photoluminescence, differential Hall measurement, and secondary ion mass spectrometry. Net hole concentration of 5-8X10(18)cm3 is close to Zn concentration. Band-to-acceptor transition peak is dominant in low temperature photoluminescence.en
dc.language.isoko-
dc.title광소자 제작을 위해 spin-on 방식으로 Zn 도핑된 InP의 광학적 특성 분석en
dc.typeArticleen
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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