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광소자 제작을 위해 spin-on 방식으로 Zn 도핑된 InP의 광학적 특성 분석
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 윤경훈 | - |
| dc.contributor.author | 이용호 | - |
| dc.contributor.author | 여덕호 | - |
| dc.contributor.author | 이호승 | - |
| dc.contributor.author | 김성준 | - |
| dc.date.accessioned | 2009-09-08T04:38:21Z | - |
| dc.date.available | 2009-09-08T04:38:21Z | - |
| dc.date.issued | 2000-05 | - |
| dc.identifier.citation | 제8회 광전자 및 광통신 학술회의, pp. 229-230, 무주리조트, 2000년 5월 16-18일 | en |
| dc.identifier.uri | https://hdl.handle.net/10371/8920 | - |
| dc.description.abstract | In this study Zn doping was carried out by spin-on method for the fabrication of InP based optical devices. The properties of Zn-doped InP were characterized using low temperature photoluminescence, differential Hall measurement, and secondary ion mass spectrometry. Net hole concentration of 5-8X10(18)cm3 is close to Zn concentration. Band-to-acceptor transition peak is dominant in low temperature photoluminescence. | en |
| dc.language.iso | ko | - |
| dc.title | 광소자 제작을 위해 spin-on 방식으로 Zn 도핑된 InP의 광학적 특성 분석 | en |
| dc.type | Article | en |
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