Publications
Detailed Information
Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Ju Han | - |
| dc.contributor.author | Si, Sang Kee | - |
| dc.contributor.author | Moon, Young Boo | - |
| dc.contributor.author | Yoon, Eui Joon | - |
| dc.contributor.author | Kim, Sung June | - |
| dc.date.accessioned | 2009-09-08T06:57:51Z | - |
| dc.date.available | 2009-09-08T06:57:51Z | - |
| dc.date.issued | 1997-06 | - |
| dc.identifier.citation | Electronics Letters, 1997, 33, (13), pp.1179-1181 | en |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/8978 | - |
| dc.description.abstract | SiO, has been successfully used as the dielectric capping material
for bandgap tuning in TnGaAshP MQW for the first time where the InGaAs cap layer is used simultaneously. The samples showed large blue shifts of bandgap energy after RTA treatment (185 and 230meV at 750 and 850C, respectively). Samples with SO,-InP or SiN,v-InGaAs cap layer combinations did not show significant energy shifts. | en |
| dc.language.iso | en | - |
| dc.publisher | Institution of Engineering and Technology (IET) | en |
| dc.title | Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 이주한 | - |
| dc.contributor.AlternativeAuthor | 시상기 | - |
| dc.contributor.AlternativeAuthor | 문영부 | - |
| dc.contributor.AlternativeAuthor | 윤의준 | - |
| dc.contributor.AlternativeAuthor | 김성준 | - |
| dc.identifier.doi | 10.1049/el:19970761 | - |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.