서울대학교 중앙도서관
S-Space 소개
My S-Space
로그인이 필요합니다.
Login

S-Space

Browse

Author

Jump to a point in the index
Or type in a year

  • Sort by
  • In order
  • Results/Page
  • Authors/record

Showing results 1 to 23 of 23

Issue DateTitle / Author(s) / CitationFileAltmetrics
2013-09
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
DOI
2014-09
Atomically thin p–n junctions with van der Waals heterointerfaces
DOI
2014-09
Heterostructures based on inorganic and organic van der Waals systems
DOI
2015-06
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
DOI
2015-07
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
DOI
2016-11
Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

Nanomaterials, Vol.6 No.11, p. 193

DOI
2017-02
Epitaxially Self-Assembled Alkane Layers for Graphene Electronics
DOI
2017-05
Direct observation of grain boundaries in chemical vapor deposited graphene
DOI
2017-05
Thickness-dependent Schottky barrier height of MoS2 field-effect transistors
DOI
2017-06
Recovery of the Pristine Surface of Black Phosphorus by Water Rinsing and Its Device Application

Kim, Suhyun; Lee, Jong-Young; Lee, Chul-Ho; Lee, Gwan-Hyoung; Kim, Jihyun

ACS Applied Materials & Interfaces, Vol.9 No.25, pp.21382-21389

DOI
2019-07
All-2D ReS2 transistors with split gates for logic circuitry
DOI
2020-04
Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions
DOI
2020-04
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge
DOI
2020-10
Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure
DOI
2021-01
Enhanced Photoluminescence of Multiple Two-Dimensional van der Waals Heterostructures Fabricated by Layer-by-Layer Oxidation of MoS2
DOI
2021-03
Atomic-layer-confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides
DOI
2021-12
Electrical Modulation of Exciton Complexes in Light-Emitting Tunnel Transistors of a van der Waals Heterostructure
DOI
2022-02
Band Structure Engineering of WSe2 Homo-Junction Interfaces via Thickness Control

Shin, June-Chul; Kim, Yeon Ho; Watanabe, Kenji; Taniguchi, Takashi; Lee, Chul-Ho; Lee, Gwan-Hyoung

Advanced Materials Interfaces, Vol.9 No.4, p. 2101763

DOI
2022-10
Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4Se9
DOI
2022-10
Irreversible Conductive Filament Contacts for Passivated van der Waals Heterostructure Devices
DOI
2023-04
Laser-Induced Phase Transition and Patterning of hBN-Encapsulated Mo Te2
DOI
Boltzmann Switching MoS2 Metal–Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky–Mott Limit
DOI
Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-Emitting Transistors
DOI
1