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Showing results 1 to 7 of 7

Issue Date	Title / Author(s) / Citation	File	Altmetrics
2015-07	Materials for Flexible, Stretchable Electronics: Graphene and 2D Materials Kim, Sang Jin; Choi, Kyoungjun; Lee, Bora; Kim, Yuna; Hong, Byung Hee Annual Review of Materials Research, Vol.45, pp.63-84	DOI
2018-07	Two-dimensional thickness-dependent avalanche breakdown phenomena in MoS2 field-effect transistors under high electric fields Pak, Jinsu; Jang, Yeonsik; Byun, Junghwan; Cho, Kyungjune; Kim, Tae-Young; Kim, Jae-Keun; Choi, Barbara Yuri; Shin, Jiwon; Hong, Yongtaek; Chung, Seungjun; Lee, Takhee ACS Nano, Vol.12 No.7, pp.7109-7116	view file DOI
2020	Engineering Structures and Properties of Nanomaterials for Biomedical and Device Applications 이종환	view file link
2021-01	Tailored Graphene Micropatterns by Wafer-Scale Direct Transfer for Flexible Chemical Sensor Platform Kim, Yeonhoo; Kim, Taehoon; Lee, Jinwoo; Choi, Yong Seok; Moon, Joonhee; Park, Seo Yun; Lee, Tae Hyung; Park, Hoon Kee; Lee, Sol A; Kwon, Min Sang; Byun, Hyung-Gi; Lee, Jong-Heun; Lee, Myoung-Gyu; Hong, Byung Hee; Jang, Ho Won Advanced Materials, Vol.33 No.2, p. 2004827	DOI
2022-04	Channel-Length-Modulated Avalanche Multiplication in Ambipolar WSe2 Field-Effect Transistors Kim, Jaeyoung; Cho, Kyungjune; Pak, Jinsu; Lee, Woocheol; Seo, Junseok; Kim, Jae-Keun; Shin, Jiwon; Jang, Juntae; Baek, Kyeong-Yoon; Lee, Jonghoon; Chung, Seungjun; Kang, Keehoon; Lee, Takhee ACS Nano, Vol.16 No.4, pp.5376-5383	DOI
2023	Doping-Induced Optical and Electrical Properties of InSe FETs 이태현	view file link
2023	Avalanche multiplication phenomena in ambipolar TMDC field-effect transistors 김재영	view file link

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