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Showing results 1 to 6 of 6

Issue Date	Title / Author(s) / Citation	File	Altmetrics
2021-06	Guideline of optimum interfacial layers in metal-ferroelectric-insulator-semiconductor structure for gate stack and ferroelectric tunnel junction Yu, Junsu; Min, Kyung Kyu; Kim, Yeonwoo; Kwon, Daewoong; Park, Byung-Gook 2021 SILICON NANOELECTRONICS WORKSHOP (SNW), pp.29-30	DOI
2022-01	Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal-ferroelectric-insulator-semiconductor stack Min, Kyung Kyu; Kwon, Seok Jin; Kim, Yeonwoo; Yu, Junsu; Lee, Jong-Ho; Park, Byung-Gook; Kwon, Daewoong Applied Physics Letters, Vol.120 No.1, p. 012901	DOI
2022-01	Ferroelectricity of pure HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application Min, Kyung Kyu; Yu, Junsu; Kim, Yeonwoo; Kim, Chae Soo; Jang, Taejin; Hwang, Sungmin; Kim, Hyungjin; Lee, Jong-Ho; Kwon, Daewoong; Park, Byung-Gook Applied Surface Science, Vol.573, p. 151566	DOI
2022-04	Lamination method for improved polarization-leakage current relation in HfO2-based metal/ferroelectric/insulator/semiconductor structure Kim, Yeonwoo; Min, Kyung Kyu; Yu, Junsu; Kwon, Daewoong; Park, Byung-Gook Semiconductor Science and Technology, Vol.37 No.4, p. 045001	DOI
2022-05	Damage-Induced Ferroelectricity in HfOx-Based Thin Film Min, Kyung Kyu; Kim, Hyun-Min; Kim, Yeonwoo; Kim, Changha; Yu, Junsu; Lee, Jong-Ho; Park, Byung-Gook; Kwon, Daewoong IEEE Electron Device Letters, Vol.43 No.5, pp.713-716	DOI
2022-06	Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives Shin, Wonjun; Bae, Jong-Ho; Kwon, Dongseok; Koo, Ryun-Han; Park, Byung-Gook; Kwon, Daewoong; Lee, Jong-Ho IEEE Electron Device Letters, Vol.43 No.6, pp.958-961	DOI

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