Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives

Abstract

We investigate the effects of length (L) and width (W) scaling on the low-frequency noise characteristics of the ferroelectric tunnel junction (FTJ). The FTJ is composed of metal/ferroelectric/dielectric/semiconductor (TiN/HfZrO2/SiO2/n(+) Si). In the high-resistance state, 1/f noise increases proportionally to 1/(WL beta)-L-alpha(alpha congruent to 1, beta > 1), whereas the shot noise has no scaling dependence. In the low-resistance state, the 1/f noise of the FTJ shows a more sensitive dependence on L scaling than W scaling since the switching and conduction mechanisms are more affected by the process-induced damaged edge regions.