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Guideline of optimum interfacial layers in metal-ferroelectric-insulator-semiconductor structure for gate stack and ferroelectric tunnel junction

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Authors

Yu, Junsu; Min, Kyung Kyu; Kim, Yeonwoo; Kwon, Daewoong; Park, Byung-Gook

Issue Date
2021-06
Publisher
IEEE, ELECTRON DEVICES SOC & RELIABILITY GROUP
Citation
2021 SILICON NANOELECTRONICS WORKSHOP (SNW), pp.29-30
Abstract
To investigate metal-ferroelectric-insulator-semiconductor (MFIS) stack design guidelines for its applications, the ferroelectricity in various IL thicknesses were investigated. As a result, IL has leaky insulator characteristics rather than an ideal dielectric and the MFIS stack shows a critical difference in ferroelectric characteristics.
ISSN
2161-4636
URI
https://hdl.handle.net/10371/186460
DOI
https://doi.org/10.1109/SNW51795.2021.00016
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