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Guideline of optimum interfacial layers in metal-ferroelectric-insulator-semiconductor structure for gate stack and ferroelectric tunnel junction
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- Authors
- Issue Date
- 2021-06
- Citation
- 2021 SILICON NANOELECTRONICS WORKSHOP (SNW), pp.29-30
- Abstract
- To investigate metal-ferroelectric-insulator-semiconductor (MFIS) stack design guidelines for its applications, the ferroelectricity in various IL thicknesses were investigated. As a result, IL has leaky insulator characteristics rather than an ideal dielectric and the MFIS stack shows a critical difference in ferroelectric characteristics.
- ISSN
- 2161-4636
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