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Issue Date	Title / Author(s) / Citation	File
1997-06	Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping Lee, Ju Han; Si, Sang Kee; Moon, Young Boo; Yoon, Eui Joon; Kim, Sung June Electronics Letters, 1997, 33, (13), pp.1179-1181	DOI
1998-02	Low Temperature Photoluminescence Characteristics of Zn-doped InP Grown by Metalorganic Chemical Vapor Deposition Moon, Young Boo; Si, Sang Kee; Yoon, Eui Joon; Kim, Sung June J. Appl. Phys. 83, 2261 (1998)	view file DOI
1998-02	Deep Level in Heavily Zn-doped InP Layers Implanted with Ti and Ti/P Si, Sang Kee; Kim, Sung June; Moon, Young Boo; Yoon, Eui Joon J. Appl. Phys. 83, 2366 (1998)	view file DOI