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Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping
Cited 22 time in
Web of Science
Cited 23 time in Scopus
- Authors
- Issue Date
- 1997-06
- Citation
- Electronics Letters, 1997, 33, (13), pp.1179-1181
- Abstract
- SiO, has been successfully used as the dielectric capping material
for bandgap tuning in TnGaAshP MQW for the first time where
the InGaAs cap layer is used simultaneously. The samples showed
large blue shifts of bandgap energy after RTA treatment (185 and
230meV at 750 and 850C, respectively). Samples with SO,-InP
or SiN,v-InGaAs cap layer combinations did not show significant
energy shifts.
- ISSN
- 0013-5194
- Language
- English
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