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Highly efficient copper-indium-selenide quantum dot solar cells: Suppression of carrier recombination by controlled ZnS overlayers

Cited 159 time in Web of Science Cited 169 time in Scopus
Authors

Kim, Jae-Yup; Yang, Jiwoong; Yu, Jung Ho; Baek, Woonhyuk; Lee, Chul-Ho; Son, Hae Jung; Hyeon, Taeghwan; Ko, Min Jae

Issue Date
2015-11
Publisher
American Chemical Society
Citation
ACS Nano, Vol.9 No.11, pp.11286-11295
Abstract
Copper-indium-selenide (CISe) quantum dots (QDs) are a promising alternative to the toxic cadmium- and lead-chalcogenide QDs generally used in photovoltaics due to their low toxicity, narrow band gap, and high absorption coefficient. Here, we demonstrate that the photovoltaic performance of CISe QD-sensitized solar cells (QDSCs) can be greatly enhanced simply by optimizing the thickness of ZnS overlayers on the QD-sensitized TiO2 electrodes. By roughly doubling the thickness of the overlayers compared to the conventional one, conversion efficiency is enhanced by about 40%. Impedance studies reveal that the thick ZnS overlayers do not affect the energetic characteristics of the photoanode, yet enhance the kinetic characteristics, leading to more efficient photovoltaic performance. In particular, both interfacial electron recombination with the electrolyte and nonradiative recombination associated with QDs are significantly reduced. As a result, our best cell yields a conversion efficiency of 8.10% under standard solar illumination, a record high for heavy metal-free QD solar cells to date.
ISSN
1936-0851
URI
https://hdl.handle.net/10371/166030
DOI
https://doi.org/10.1021/acsnano.5b04917
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리

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