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A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors

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Authors

Kim, Baek S; Hyun, Seung D; Moon, Taehwan; Do Kim, Keum; Lee, Young H; Park, Hyeon W; Lee, Yong B; Roh, Jangho; Kim, Beom Y; Kim, Ho H; Park, Min H; Hwang, Cheol S

Issue Date
2020-04-07
Citation
Nanoscale Research Letters. 2020 Apr 07;15(1):72
Abstract
Abstract
The chemical, physical, and electrical properties of the atomic layer deposited Hf0.5Zr0.5O2 thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration, grain size, and the resulting ferroelectric properties. Depositing Hf0.5Zr0.5O2 films with the TDMA precursors results in lower C concentration and slightly larger grain size. These findings are beneficial to grow more ferroelectric-phase-dominant film, which mitigates its wake-up effect. From the wake-up test of the TDMA-Hf0.5Zr0.5O2 film with a 2.8 MV/cm cycling field, the adverse wake-up effect was well suppressed up to 105 cycles, with a reasonably high double remanent polarization value of ~40 μC/cm2. The film also showed reliable switching up to 109 cycles with the 2.5MV/cm cycling field without involving the wake-up effect but with the typical fatigue behavior.
URI
https://doi.org/10.1186/s11671-020-03301-4

https://hdl.handle.net/10371/168829
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