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Low frequency noise characteristics in multilayer WSe2 field effect transistor

Cited 32 time in Web of Science Cited 0 time in Scopus
Issue Date
2015-01
Citation
Applied Physics Letters, Vol.106 No.2, p. 023504
Abstract
This paper investigates the low-frequency noise properties of multilayer WSe2 field effect transistors (FETs) in subthreshold, linear, and saturation regime. The measured noise power spectral density of drain current (S-ID) shows that the low-frequency noise in multilayer WSe2 FET fits well to a 1/f(gamma) power law with gamma similar to 1 in the frequency range of 10 Hz-200 Hz. From the dependence of S-ID on the drain current, carrier mobility fluctuation is considered as a dominant low frequency noise mechanism from all operation regimes in multilayer WSe2 FET. Extracted Hooge's parameter in this study is within the value of 0.12, comparable to those of the transition metal dichalcogenide FETs in recent reports. (C) 2015 AIP Publishing LLC.
ISSN
0003-6951
URI
https://hdl.handle.net/10371/172168
DOI
https://doi.org/10.1063/1.4906141
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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