Publications
Detailed Information
Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor
Cited 6 time in
Web of Science
Cited 7 time in Scopus
- Authors
- Issue Date
- 2022-07
- Citation
- IEEE Electron Device Letters, Vol.43 No.7, pp.1001-1004
- Abstract
- © 1980-2012 IEEE.We propose a hybrid self-curing method based on the parasitic bipolar junction transistor (PBJT) inherent to metal-oxide-semiconductor field-effect transistor (MOSFET). The PBJT utilizes the positive feedback of impact ionization to flow a large current close to the channel, generating Joule heat. Unlike conventional self-curing methods, the PBJT-based self-curing recovers the damaged gate oxide along the lateral dimension of the entire channel. The effects of the hybrid curing are quantitatively verified by low-frequency noise spectroscopy and charge pumping method.
- ISSN
- 0741-3106
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.