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Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation
Cited 3 time in
Web of Science
Cited 4 time in Scopus
- Authors
- Issue Date
- 2019-06
- Publisher
- IEEE
- Citation
- 2019 SILICON NANOELECTRONICS WORKSHOP (SNW), pp.61-62
- Abstract
- In this paper, we analyzed lateral migration mechanism of holes (LM) in 3D NAND Flash memory during retention operation. Retention characteristics were investigated using Technology Computer-Aided Design (TCAD) simulation and modeled using Weibull cumulative distribution function (WCD). Time-constant (tau) at various temperatures were extracted through the modeled equation. Finally, the activation energy (E-a) of LM was extracted by applying to the Arrhenius equation.
- ISSN
- 2161-4636
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