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A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors
Cited 4 time in
Web of Science
Cited 5 time in Scopus
- Authors
- Issue Date
- 2019-04
- Citation
- Micromachines, Vol.10 No.4, p. 256
- Abstract
- A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage capacitor with a complex three-dimensional structure.
- ISSN
- 2072-666X
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