Slingshot Pull-In Operation for Low-Voltage Nanoelectromechanical Memory Switches

Abstract

A novel "slingshot" pull-in operation is proposed to lower the operation voltage (V-DD) of nanoelectromechanical (NEM) memory switches for the implementation of monolithic 3-D (M3D) CMOS-NEM hybrid reconfigurable logic (RL) circuits. According to the theoretical calculation and experimental data, the proposed "slingshot" pull-in operation lowers V-DD of the NEM memory switches by similar to 0.84 times. It contributes to the overall V-DD reduction and chip density boost of M3D CMOS-NEM RL circuits.