Nanoelectromechanical Nonvolatile Memory Cells with Scaled Beam Dimensions

Abstract

In order to confirm the scalability of the nanoelectromechanical (NEM) nonvolatile memory cell, the lateral size of a bit-line (BL) beam is scaled down to 50 nm, using the photoresist ashing process. For low operation voltages, a cantilever beam was adopted as a BL beam design. Titanium nitride was used as the structural material, and amorphous silicon was used as the sacrificial material.