Publications
Detailed Information
Improved compact model for double-gate tunnel field-effect transistors by the rigorous consideration of gate fringing field
Cited 13 time in
Web of Science
Cited 14 time in Scopus
- Authors
- Issue Date
- 2017-07
- Publisher
- IOP Publishing Ltd
- Citation
- Japanese Journal of Applied Physics, Vol.56 No.8, p. 084301
- Abstract
- In this work, the accuracy of a compact current-voltage (I-V) model for double-gate n-channel tunnel field-effect transistors (TFETs) is improve by considering outer and inner gate fringing field effects. The refined model is benchmarked against technology computer-aided design (TCAD) device simulations and compared against a previously published compact model. The normalized root-mean-square error for current in the linear region of operation (i.e., for 0.05V drain voltage) is reduced from similar to 593 to similar to 5%. (C) 2017 The Japan Society of Applied Physics
- ISSN
- 0021-4922
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.