Publications

Detailed Information

On-State Resistance Instability of Programmed Antifuse Cells during Read Operation

Cited 0 time in Web of Science Cited 0 time in Scopus
Authors

Han, Jae Hwan; Lee, Hyunjin; Kim, Wansoo; Yoon, Gyuhan; Choi, Woo Young

Issue Date
2014-10
Publisher
대한전자공학회
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.14 No.5, pp.503-507
Abstract
The on-state resistance (R-ON) instability of standard complementary metal-oxide-semiconductor (CMOS) antifuse cells has been observed for the first time by using acceleration factors: stress current and ambient temperature. If the program current is limited, the R-ON increases as time passes during read operation.
ISSN
1598-1657
URI
https://hdl.handle.net/10371/186801
DOI
https://doi.org/10.5573/JSTS.2014.14.5.503
Files in This Item:
There are no files associated with this item.
Appears in Collections:

Altmetrics

Item View & Download Count

  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Share