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On-State Resistance Instability of Programmed Antifuse Cells during Read Operation
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- Authors
- Issue Date
- 2014-10
- Publisher
- 대한전자공학회
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.14 No.5, pp.503-507
- Abstract
- The on-state resistance (R-ON) instability of standard complementary metal-oxide-semiconductor (CMOS) antifuse cells has been observed for the first time by using acceleration factors: stress current and ambient temperature. If the program current is limited, the R-ON increases as time passes during read operation.
- ISSN
- 1598-1657
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