Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory

Abstract

A modified modeling of residue effect on nano-electromechanical nonvolatile memory (NEMory) is presented for considering wet etching process. The effect of a residue under the cantilever is investigated for the optimization. The feasibility of the proposed model is investigated by finite element analysis simulations.