Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs)

Abstract

A gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS). It is confirmed that the SS of the proposed GHG TFET is successfully enhanced by suppressing the gate-diagonal tunneling current. Compared with conventional gate-normal TFETs, the final optimized GHG TFET improves the values of the point SS, effective SS, and on-current by 71 & x0025;, 15 & x0025;, and 2.4 times, respectively.