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Design guideline of tunnel field-effect transistors (TFETs) considering negative differential transconductance (NDT)
Cited 5 time in
Web of Science
Cited 8 time in Scopus
- Authors
- Issue Date
- 2020-01
- Publisher
- Pergamon Press Ltd.
- Citation
- Solid-State Electronics, Vol.163, p. 107659
- Abstract
- A gate-normal tunnel field-effect transistor (TFET) showing negative differential transconductance (NDT) and its design guideline are proposed. The introduction of the source depletion to the gate-normal TFETs leads to negative differential transconductance. It is also confirmed that the NDT of the proposed gate-normal TFET is successfully enhanced by modulating gate-induced source depletion effects.
- ISSN
- 0038-1101
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