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A robust latch-type sense amplifier using adaptive latch resistance

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Authors

Song, Taejoong; Lee, Sang Min; Choi, Jaehyouk; Kim, Stephen; Kim, Gyuhong; Lim, Kyutae; Laskar, Joy

Issue Date
2010
Publisher
IEEE
Citation
2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010, pp.182-185
Abstract
A latch-type sense amplifier (SA) utilizing adaptive resistance technique is proposed. With adaptively adjusted resistance in a latch path, the proposed SA can compensate for an erroneous voltage drop in bit-lines induced by bit-cell leakage current. The simulation shows that the sense amplifier margin (SM) is improved in the presence of mismatches. The SA test chip is fabricated in a 0.18-μm CMOS technology showing the SM improvement of 6% to 15% at various supply voltages.
URI
https://hdl.handle.net/10371/199449
DOI
https://doi.org/10.1109/ICICDT.2010.5510258
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area Wired interconnection, Wireless communication

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