A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology

Abstract

This paper presents a W-band low noise amplifier (LNA) in 50-nm InP high-electron-mobility-transistor (HEMT) technology. The LNA employs a threestage design in common-source (CS) configuration using 2x20 mu m transistors, coplanar waveguides (CPW), metal-insulator-metal capacitors (MIM), and NiCr-based thin film resistors (TFR). The first two stages employ inductive source feedback for concurrent noise and gain matching and in-band stability. The 3rd stage utilizes resistive parallel feedback. This design shows a simulated noise figure of 1.4 dB with a measured associated gain of 14 dB at 94 GHz while consuming a DC power of 75 mW.