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300-GHz 2nd-Order Subharmonic Upconversion Mixer Using Symmetric MOS Varactors in 65-nm CMOS

Cited 4 time in Web of Science Cited 3 time in Scopus
Authors

Chen, Zhiyu; Choi, Wooyeol; Kenneth, K. O.

Issue Date
2020
Publisher
Institute of Electrical and Electronics Engineers Inc.
Citation
IEEE Solid-State Circuits Letters, Vol.3, pp.538-541
Abstract
A 2nd-order subharmonic upconversion mixer with an intermediate frequency of 150 GHz and radio frequency (RF) of 290 GHz that employs accumulation mode MOS symmetric varactors is demonstrated in 65-nm complementary metal-oxide-semiconductor. A transformer-based hybrid is utilized to improve port isolation. The mixer achieves the maximum conversion gain of -16 dB including the losses (similar to 2 dB total) of input and output baluns added for measurements. The local oscillator power at 70 GHz was 11.5 dBm and the 27-GHz 3-dB bandwidth spans between 284 and 311 GHz. The -11.6-dBm output 1-dB compression point from a single mixer is the highest among that for the 2nd-order subharmonic mixers with RF of similar to 300 GHz fabricated in any process technologies.
ISSN
2573-9603
URI
https://hdl.handle.net/10371/199966
DOI
https://doi.org/10.1109/LSSC.2020.3036804
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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