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Terahertz RF Front-End Employing Even-Order Subharmonic MOS Symmetric Varactor Mixers in 65-nm CMOS for Hydration Measurements at 560 GHz

Cited 15 time in Web of Science Cited 15 time in Scopus
Authors

Zhong, Qian; Choi, Wooyeol; Kenneth, K. O.

Issue Date
2018
Publisher
IEEE
Citation
2018 IEEE SYMPOSIUM ON VLSI CIRCUITS, Vol.2018-June, pp.211-212
Abstract
A 560-GHz RF front-end employing MOS symmetric varactor (SVAR) subharmonic mixers achieves a minimum SSB noise figure (NF) of 35 dB in the 4th order subharmonic mixing (SHM) mode which is 5-7 dB lower than that of SiGe HBT mixers. The front-end fabricated in 65-nm CMOS also achieves 45-dB SSB NF for 6th order SHM at RF=810 GHz and 60-dB SSB NF for 10th order SHM at RF=1.2 THz. Use of SVAR's in a mixer is the first and the 1.2-THz RF is the highest among the silicon coherent RF front-ends.
URI
https://hdl.handle.net/10371/199977
DOI
https://doi.org/10.1109/VLSIC.2018.8502297
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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