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Terahertz RF Front-End Employing Even-Order Subharmonic MOS Symmetric Varactor Mixers in 65-nm CMOS for Hydration Measurements at 560 GHz
Cited 15 time in
Web of Science
Cited 15 time in Scopus
- Authors
- Issue Date
- 2018
- Publisher
- IEEE
- Citation
- 2018 IEEE SYMPOSIUM ON VLSI CIRCUITS, Vol.2018-June, pp.211-212
- Abstract
- A 560-GHz RF front-end employing MOS symmetric varactor (SVAR) subharmonic mixers achieves a minimum SSB noise figure (NF) of 35 dB in the 4th order subharmonic mixing (SHM) mode which is 5-7 dB lower than that of SiGe HBT mixers. The front-end fabricated in 65-nm CMOS also achieves 45-dB SSB NF for 6th order SHM at RF=810 GHz and 60-dB SSB NF for 10th order SHM at RF=1.2 THz. Use of SVAR's in a mixer is the first and the 1.2-THz RF is the highest among the silicon coherent RF front-ends.
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Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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