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54 GHz CMOS LNAs with 3.6 dB NF and 28.2 dB Gain using Transformer Feedback Gm-boosting Technique

Cited 10 time in Web of Science Cited 13 time in Scopus
Authors

Guo, Shita; Xi, Tianzuo; Gui, Ping; Zhang, Jing; Choi, Wooyeol; Kenneth, K. O.; Fan, Yanli; Huang, Daquan; Gu, Richard; Morgan, Mark

Issue Date
2014
Publisher
IEEE
Citation
2014 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), pp.185-188
Abstract
This paper presents a novel topology of low-noise amplifier (LNA) with noise reduction and gain improvement. A transformer feedback gm-boosting technique is proposed in a single-ended cascode LNA to reduce the noise figure (NF) and improve the gain simultaneously. Two 54 GHz single-ended cascode LNAs, with transformer and transmission-line for matching, respectively, are demonstrated to verify this technique. Fabricated in a 65 nm CMOS process, the transformer-based (TF-based) LNA exhibits a minimum noise figure (NF) of 3.6 dB at 53.5 GHz and a highest power gain of 28.2 dB at 54 GHz in measurement. To our best knowledge, this LNA has the best noise figure and power gain among all the published V-band CMOS LNAs. The transmission-line-based (TL-based) LNA exhibits a minimum noise figure of 3.8 dB at 53.9 GHz and a highest power gain of 25.4 dB at 54.2 GHz in measurement. Both the LNAs consume 18 mA from a power supply of 1.1 V.
URI
https://hdl.handle.net/10371/199997
DOI
https://doi.org/10.1109/ASSCC.2014.7008891
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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