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W-band divide-by-3 frequency divider using 0.1 mu m InAlAs/InGaAs metamorphic HEMT technology
Cited 11 time in
Web of Science
Cited 17 time in Scopus
- Authors
- Issue Date
- 2005-09
- Publisher
- Institute of Electrical Engineers
- Citation
- Electronics Letters, Vol.41 No.18, pp.1005-1007
- Abstract
- A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 mu m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW
- ISSN
- 0013-5194
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Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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