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Self-Dynamic and Static Biasing for Output Power and Efficiency Enhancement of Complementary Antiparallel Diode Pair Frequency Tripler

Cited 7 time in Web of Science Cited 7 time in Scopus
Authors

Shim, Dongha; Choi, Wooyeol; Lee, Jong-Wook; Kenneth, K. O.

Issue Date
2017-12
Publisher
Institute of Electrical and Electronics Engineers
Citation
IEEE Microwave and Wireless Components Letters, Vol.27 No.12, pp.1110-1112
Abstract
A 157-GHz complementary antiparallel diode pair (CAPDP) frequency tripler using a combination of self-dynamic and static dc biasing to enhance output power and conversion efficiency is demonstrated in 130-nm complementary metal-oxide-semiconductor. The self-dynamic biasing expands the off-zone of CAPDP to reduce the output power roll-off at high input levels. A negative static dc bias tunes the off-zone to enhance the nonlinearity to increase the output power at low input levels. The frequency tripler generates -18.6 dBm maximum output power (P-OUT) at 157.5 GHz at the input power (P-IN) of 13.4 dBm. At P-IN of 11 dBm, P-OUT is 2.7-dB higher or conversion loss (CL) is 2.7-dB lower than the tripler with a cathode-tied CAPDP. At P-IN greater than 13.4 dBm, P-OUT should be more than 4.3-dB higher and CL is more than 4.3-dB lower.
ISSN
1531-1309
URI
https://hdl.handle.net/10371/200046
DOI
https://doi.org/10.1109/LMWC.2017.2757845
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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