Packaging of SiC Power Module with a Low-Permittivity Material to Reduce Capacitive Coupling

Abstract

This study proposes a new power module configuration to reduce CM noise. The proposed module utilized a low permittivity material which replaces a part of bottom Cu layer. The design scheme does not sacrifice thermal performance and the size of power module remains the same. The power module does not experience a reduction in break-down voltage by the proposed design. The parasitic CM capacitance is reduced by 42% compared to that of the conventional module. Detailed explanations about packaging method for the proposed power module are also presented.