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GaN nanowire/thin film vertical structure p-n junction light-emitting diodes
Cited 19 time in
Web of Science
Cited 17 time in Scopus
- Authors
- Issue Date
- 2013-12
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, Vol.103 No.26, p. 261116
- Abstract
- Here, we report vertical-type GaN nanowire-based light-emitting diodes (LEDs) fabricated by the metal-catalyzed vapor-liquid-solid (VLS) method. The nickel-catalyzed VLS process yielded both n-GaN nanowires and GaN nanoislands on substrates. The nanoislands markedly deteriorated the diode and electroluminescent characteristics in n-nanowire/p-film LED structures because of parasitic resistance and deep level emission caused by nanoislands. By burying the nanoislands with an insulating layer and adopting coaxial p-n junction nanowire structures, nanowire-based LEDs were shown to exhibit superior device performance, including highly rectifying and monochromatic electroluminescent characteristics. Thus, the undesirable effects associated with nanoislands were considerably suppressed. This work provides a rationale for designing high-performance vertical nanowire-based LEDs. (C) 2013 AIP Publishing LLC.
- ISSN
- 0003-6951
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Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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