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Gallium nitride nanostructures for light-emitting diode applications
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Moon Sung | - |
dc.contributor.author | Lee, Chul-Ho | - |
dc.contributor.author | Park, Jun Beom | - |
dc.contributor.author | Yoo, Hyobin | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2024-05-16T01:16:57Z | - |
dc.date.available | 2024-05-16T01:16:57Z | - |
dc.date.created | 2020-11-18 | - |
dc.date.created | 2020-11-18 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.citation | Nano Energy, Vol.1 No.3, pp.391-400 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.uri | https://hdl.handle.net/10371/202341 | - |
dc.description.abstract | This review summarizes recent research on GaN nanostructures for light-emitting diode (LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a brief explanation of the basic components of the LED structure based on nitride nanostructures. Various device architectures of nanostructured GaN LEDs, as the main focus of the review, are then presented, covering research from the early LEDs based on a single GaN nanostructure to the most advanced LEDs based on GaN nanostructure arrays on flexible substrates. The research discussed in this review will promote novel applications of GaN LEDs that exploit the advantages of nanostructures. (C) 2012 Elsevier Ltd. All rights reserved. | - |
dc.language | 영어 | - |
dc.publisher | Elsevier BV | - |
dc.title | Gallium nitride nanostructures for light-emitting diode applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.nanoen.2012.03.005 | - |
dc.citation.journaltitle | Nano Energy | - |
dc.identifier.wosid | 000318050200009 | - |
dc.identifier.scopusid | 2-s2.0-84860430552 | - |
dc.citation.endpage | 400 | - |
dc.citation.number | 3 | - |
dc.citation.startpage | 391 | - |
dc.citation.volume | 1 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Chul-Ho | - |
dc.contributor.affiliatedAuthor | Yi, Gyu-Chul | - |
dc.type.docType | Review | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | ALLOYED OHMIC CONTACTS | - |
dc.subject.keywordPlus | DOPED GAN FILMS | - |
dc.subject.keywordPlus | LASER LIFT-OFF | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | NANOWIRE GROWTH | - |
dc.subject.keywordPlus | NANOROD ARRAYS | - |
dc.subject.keywordPlus | QUANTUM CONFINEMENT | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | DESIGN PRINCIPLES | - |
dc.subject.keywordAuthor | Gallium nitride | - |
dc.subject.keywordAuthor | Nanostructures | - |
dc.subject.keywordAuthor | Light-emitting diodes | - |
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- College of Engineering
- Department of Electrical and Computer Engineering
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