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Gallium nitride nanostructures for light-emitting diode applications
Cited 69 time in
Web of Science
Cited 73 time in Scopus
- Authors
- Issue Date
- 2012-05
- Publisher
- Elsevier BV
- Citation
- Nano Energy, Vol.1 No.3, pp.391-400
- Abstract
- This review summarizes recent research on GaN nanostructures for light-emitting diode (LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a brief explanation of the basic components of the LED structure based on nitride nanostructures. Various device architectures of nanostructured GaN LEDs, as the main focus of the review, are then presented, covering research from the early LEDs based on a single GaN nanostructure to the most advanced LEDs based on GaN nanostructure arrays on flexible substrates. The research discussed in this review will promote novel applications of GaN LEDs that exploit the advantages of nanostructures. (C) 2012 Elsevier Ltd. All rights reserved.
- ISSN
- 2211-2855
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Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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