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GaN/ZnO Nanotube Heterostructure Light-Emitting Diodes Fabricated on Si
Cited 9 time in
Web of Science
Cited 11 time in Scopus
- Authors
- Issue Date
- 2011-07
- Citation
- IEEE Journal on Selected Topics in Quantum Electronics, Vol.17 No.4, pp.966-970
- Abstract
- We report the fabrication and luminescent characteristics of GaN-based visible light-emitting diode (LED) arrays on Si substrates. For the fabrication of the LEDs, high-quality GaN/ZnO coaxial nanotube heterostructures were prepared by the heteroepitaxial growth of GaN layers on position-controlled ZnO nanotube arrays grown on 1-mu m-thick crack-free GaN/Si substrates. The nanostructured LEDs were composed of GaN-based p-n homo-junction with GaN/In(1-x)Ga(x)N multiple quantum wells (MQWs) coaxially coated on GaN/ZnO nanotube heterostructures. The fabricated micro-LEDs emitted visible green light that originated from the MQWs of individual coaxial LEDs. In addition, the origin of the light emission was investigated by measuring cathodoluminescence and electroluminescence spectra.
- ISSN
- 1077-260X
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Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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