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Observation of single-electron transport in a Zn0.8Mg0.2O/ZnO coaxial heterostructure nanorod
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Cited 2 time in Scopus
- Authors
- Issue Date
- 2008-08
- Publisher
- 한국물리학회
- Citation
- Journal of the Korean Physical Society, Vol.53 No.2, pp.962-966
- Abstract
- Coaxial Zn0.8Mg0.2O/ZnO hetrostructure semiconducting nanorods with different band gaps were fabricated on oxide-layer-covered Si substrates by using catalyst-free metal-organic vapor-phase epitaxy. The electrical conduction of nanorods with Ti/Au Schottky-contact electrodes, taken at various temperatures down to 50 mK, revealed a Coulomb-blockade behavior, pointing a multiple quantum-dot structure existing in the ZnO nanorod core or in the Zn0.8Mg0.2O cylindrical shell over a wide range of gate voltages. These characteristics, transformed into single-dot ones at high positive gate voltages. This study confirms, by electrical conduction measurements, the formation of a coaxial heterojunction structure between materials of two different band gaps and provides a possibility for utilizing the structure for three-terminal device applications.
- ISSN
- 0374-4884
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Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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