Publications
Detailed Information
Memristive Switching Mechanism in Colloidal InP/ZnSe/ZnS Quantum Dot-Based Synaptic Devices for Neuromorphic Computing
Cited 0 time in
Web of Science
Cited 0 time in Scopus
- Authors
- Issue Date
- 2024-05
- Publisher
- American Chemical Society
- Citation
- Nano Letters, Vol.24 No.19, pp.5855-5861
- Abstract
- Quantum dots (QDs) have garnered a significant amount of attention as promising memristive materials owing to their size-dependent tunable bandgap, structural stability, and high level of applicability for neuromorphic computing. Despite these advantageous properties, the development of QD-based memristors has been hindered by challenges in understanding and adjusting the resistive switching (RS) behavior of QDs. Herein, we propose three types of InP/ZnSe/ZnS QD-based memristors to elucidate the RS mechanism, employing a thin poly(methyl methacrylate) layer. This approach not only allows us to identify which carriers (electron or hole) are trapped within the QD layer but also successfully demonstrates QD-based synaptic devices. Furthermore, to utilize the QD memristor as a synapse, long-term potentiation/depression (LTP/LTD) characteristics are measured, resulting in a low nonlinearity of LTP/LTD at 0.1/1. On the basis of the LTP/LTD characteristics, single-layer perceptron simulations were performed using the Extended Modified National Institute of Standards and Technology, verifying a maximum recognition rate of 91.46%.
- ISSN
- 1530-6984
- Files in This Item:
- There are no files associated with this item.
Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.