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A 2 GHz CMOS Double Conversion Downconverter with Robust Image Rejection Performance against the Process and Temperature Variations

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dc.contributor.authorSong, Eun-Seok-
dc.contributor.authorChae, Soo-Ik-
dc.contributor.authorKim, Wonchan-
dc.date.accessioned2009-12-18T05:36:37Z-
dc.date.available2009-12-18T05:36:37Z-
dc.date.issued2000-
dc.identifier.citationVLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on , vol., no., pp.38-41en
dc.identifier.issn0374-4884-
dc.identifier.urihttps://hdl.handle.net/10371/21367-
dc.description.abstractThis paper presents a 2 GHz image rejection (IR) downconverter
implemented in a 0.65 pm CMOS technology. It
maintains high IR ratio against the process and temperature
variations if the on-chip passive RC components are relatively
matched. The experimental circuit provides an IR ratio
of 40.8 dB without any off-chip filtering or tuning, and
dissipates 91 mW at 3.3 V.
en
dc.language.isoen-
dc.titleA 2 GHz CMOS Double Conversion Downconverter with Robust Image Rejection Performance against the Process and Temperature Variationsen
dc.typeArticleen
dc.contributor.AlternativeAuthor송은석-
dc.contributor.AlternativeAuthor채수익-
dc.contributor.AlternativeAuthor김원찬-
dc.identifier.doi10.1109/VLSIC.2000.852845-
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