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Showing results 1 to 5 of 5

Issue Date	Title / Author(s) / Citation	File
2014-07	Charge transport and rectification in molecular junctions formed with carbon-based electrodes Kim, Taekyeong; Liu, Zhen-Fei; Lee, Chulho; Neaton, Jeffrey B.; Venkataraman, Latha Proceedings of the National Academy of Sciences of the United States of America, Vol.111 No.30, pp.10928-10932	DOI
2016-08	Elimination of the gate and drain bias stresses in I-V characteristics of WSe2 FETs by using dual channel pulse measurement Park, Jun-Mo; Cho, In-Tak; Kang, Won-Mook; Park, Byung-Gook; Lee, Jong-Ho Applied Physics Letters, Vol.109 No.5, p. 053503	DOI
2017-05	Thickness-dependent Schottky barrier height of MoS2 field-effect transistors Kwon, Junyoung; Lee, Jong-Young; Yu, Young-Jun; Lee, Chul-Ho; Cui, Xu; Honed, James; Lee, Gwan-Hyoung Nanoscale, Vol.9 No.18, pp.6151-6157	DOI
2020-03	Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides Choi, Woosuk; Akhtar, Imtisal; Kang, Dongwoon; Lee, Yeon-Jae; Jung, Jongwan; Kim, Yeon Ho; Lee, Chul-Ho; Hwang, David J.; Seo, Yongho Nano Letters, Vol.20 No.3, pp.1934-1943	DOI
2021-09	Remote modulation doping in van der Waals heterostructure transistors Lee, Donghun; Lee, Jea Jung; Kim, Yoon Seok; Kim, Yeon Ho; Kim, Jong Chan; Huh, Woong; Lee, Jaeho; Park, Sungmin; Jeong, Hu Young; Kim, Young Duck; Lee, Chul-Ho Nature Electronics, Vol.4 No.9, pp.664-670	DOI