S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Chemical and Biological Engineering (화학생물공학부) Journal Papers (저널논문_화학생물공학부)
Damascene Cu electrodeposition on metal organic chemical vapor deposition-grown Ru thin film barrier
Cited 21 time in Web of Science Cited 26 time in Scopus
- Issue Date
- American Vacuum Society
- J. Vac. Sci. Technol. B 22, 2649 (2004)
- Ru thin film grown by metal organic chemical vapor deposition (MOCVD) was applied in this study
as a substrate for superconformal Cu electrodeposition as well as a Cu diffusion barrier at a
Cu/Ru/SiO2 /Si multilayer system for microelectronics. Bis (ethyl-p-cyclopentadienyl) Ru-based
MOCVD Ru thin film had a roughness of about 12% of its thickness and well-developed textures
with high purity. It also showed good step coverage in damascene trench structure. Pd
catalyst-mediated Cu electrodeposition on Ru surface accomplished formation of continuous Cu
film. For gap filling in single damascene structure, bumps indicative of bottom-up acceleration and
superfilling were observed during two-step Cu electrodeposition on Ru substrate which involved
seeding and filling with conventional three additives system. 30 nm-thick Ru film effectively
worked as a barrier for interdiffusion and/or reaction between layers even after annealing at 800 °C
for 30 min.With the exception of slight agglomeration of Cu at elevated temperature, no silicidation
or AES-profile broadening was observed in a Cu/Ru/SiO2 /Si system.
- Files in This Item: There are no files associated with this item.
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.