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Residual Stress Behavior in Methylsilsesquioxane-Based Dielectric Thin Films

Cited 10 time in Web of Science Cited 11 time in Scopus
Authors
Oh, W.; Shin, T.J.; Ree, M.; Jin, M.Y.; Char, K.
Issue Date
2001-10-01
Publisher
Taylor & Francis
Citation
Mol. Cryst. Liq. Cryst., 371, 397
Keywords
methylsilsesquioxanethin filmlow dielectricresidual stressthermal stressrefractive indexcrackcrazeX-ray diffraction
Abstract
Residual stress of methylsilsequioxane film, which was spin-coated on silicon substrate and followed by soft-baking, was measured in-situ during curing and subsequent cooling with varying processing conditions. The thickness and refractive index of the cured films were measured using ellipsometry. Their structure was also examined by X-ray diffraction.
ISSN
1542-1406 (print)
1563-5287 (online)
Language
English
URI
https://hdl.handle.net/10371/5856
DOI
https://doi.org/10.1080/10587250108024768
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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