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Relationship between indium tin oxide surface treatment and hole injection in C60 modified devices
Cited 32 time in
Web of Science
Cited 37 time in Scopus
- Authors
- Issue Date
- 2006
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters 89, 253501
- Abstract
- The effect of indium tin oxide (ITO) surface treatment on hole injection in organic light-emitting
diode with C60 as a buffer layer on ITO was studied. Double surface dipole layer was induced on
oxygen plasma treated ITO surface, while no dipole formation was observed on ITO without surface
treatment. Interfacial energy barrier between ITO and hole transport layer was reduced by 0.4 eV by
C60 modification on oxygen plasma treated ITO surface, while there was no change of interfacial
energy barrier by C60 on ITO without surface treatment.
- ISSN
- 0003-6951
- Language
- English
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