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Relationship between indium tin oxide surface treatment and hole injection in C60 modified devices

Cited 32 time in Web of Science Cited 37 time in Scopus
Issue Date
2006
Publisher
American Institute of Physics
Citation
Applied Physics Letters 89, 253501
Abstract
The effect of indium tin oxide (ITO) surface treatment on hole injection in organic light-emitting
diode with C60 as a buffer layer on ITO was studied. Double surface dipole layer was induced on
oxygen plasma treated ITO surface, while no dipole formation was observed on ITO without surface
treatment. Interfacial energy barrier between ITO and hole transport layer was reduced by 0.4 eV by
C60 modification on oxygen plasma treated ITO surface, while there was no change of interfacial
energy barrier by C60 on ITO without surface treatment.
ISSN
0003-6951
Language
English
URI
https://hdl.handle.net/10371/61899
DOI
https://doi.org/10.1063/1.2410224
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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