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A Study on Thermal Stability of CoSi2 Employing Novel Fine-Grained Polycrystalline Silicon/CoSi2/Si(001) System

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Authors
Bae, Jong-Uk; Sohn, Dong Kyun; Park, Ji-Soo; Han, Chang Hee; Park, Jin Won; Kim, Yeong-Cheol; Kim, Jae Jeong
Issue Date
2001-11-15
Publisher
Japan Society of Applied Physics
Citation
Japanese Journal of Applied Physics 40 (2001) 6307-6310
Abstract
The cobalt silicide/fine-grained polycrystalline silicon (poly-Si) structure has been employed as gate electrodes in silicon-based very large-scale integration circuits. We have constructed a novel fine-grained poly-Si/cobalt silicide/silicon (001) structure to investigate the thermal stability of cobalt silicide at elevated temperatures. The dissociated cobalt atoms are observed to diffuse from fine-grained poly-Si/cobalt silicide and cobalt silicide/silicon (001) interfaces into the fine-grained poly-Si layer through poly-Si grain boundaries and the bulk cobalt silicide layer. The dissociated Si atoms at the cobalt silicide/silicon (001) interface are observed to grow epitaxilly on the silicon (001) substrate. This observation is consistent with previous results for circuits that employed amorphous Si instead of fine-grained poly-Si.
ISSN
0021-4922
Language
English
URI
https://hdl.handle.net/10371/63261
DOI
https://doi.org/10.1143/JJAP.40.6307
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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