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Investigation of Copper Deposition in the Presence of Benzotriazole

Cited 36 time in Web of Science Cited 37 time in Scopus
Authors
Kim, Jae Jeong; Kim, Soo-Kil; Bae, Jong-Uk
Issue Date
2002-08
Publisher
Elsevier
Citation
Thin Solid Films 415 (2002) 101-107
Keywords
CopperElectroplatingAdditiveAnnealing
Abstract
The effect of benzotriazole (BTA) on copper electroplating for ultra large-scale integrated circuits interconnection was investigated. BTA exhibited both strong suppressing and brightening effects by modifying the nucleation and growth steps. Electroplating in the presence of BTA followed a random deposition mechanism rather than a selective or preferential deposition mechanism. As a result, the crystal orientation intensity and mean aggregates size of the electroplated copper with BTA were much smaller than those of BTA-free, which resulted in an increase in resistivity. The increased resistivity of the electroplated copper in the presence of BTA was recovered to approximately 2 μΩ-cm through annealing at 400 °C in a nitrogen atmosphere by grain growth and recrystallization. The amounts of carbon and nitrogen impurities from the BTA were below the detection limit of Auger electron spectroscopy.
ISSN
0040-6090
Language
English
URI
https://hdl.handle.net/10371/63264
DOI
https://doi.org/10.1016/S0040-6090(02)00529-1
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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