Browse

Effects of an added iodine source (C2H5I) on Ru Metalorganic Chemical Vapor Deposition

Cited 15 time in Web of Science Cited 14 time in Scopus
Authors
Kim, Jae Jeong; Kim, Moon Soo; Yoon, Do Young
Issue Date
2003
Publisher
Wiley-Blackwell
Citation
Chemical Vapor Deposition, 2003, 9(2), 105-109
Keywords
Deposition ratesIodineRutheniumSurface roughness
Abstract
The effects of ethyl iodide (C2H5I) as an iodine source are investigated for Ru films grown on TiN/Ti/Si wafers by MOCVD using Ru-(EtCp)2 as a precursor. Although the introduction of the additional step of adsorbing C2H5I during the deposition is found not to affect the orientation of the ruthenium films deposited, the resistivity of films thinner than 40nm decreases by 20% or less. Moreover the introduction of iodine extends the surface-reaction-limited regime of the deposition to 400 °C on account of which an increased deposition rate and improved film properties can be expected.
ISSN
0948-1907
Language
English
URI
https://hdl.handle.net/10371/65980
DOI
https://doi.org/10.1002/cvde.200390000
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse